pointed probe造句
例句與造句
- Generic specification of four - point probe
四探針探頭通用技術(shù)條件 - Four - point probe - test equipment used to test resistivity of wafers
四探針-測(cè)量半導(dǎo)體晶的阻電面表片設(shè)備。 - Four - point probe - test equipment used to test resistivity of wafers
四探針-測(cè)量半導(dǎo)體晶片表面電阻的設(shè)備。 - Generic specification of resistivity measuring instrument with four - point probe
直流四探針電阻率測(cè)試儀通用技術(shù)條件 - Testing method for resistivity of conductive plastics with a four - point probe array
用四點(diǎn)探針排列法測(cè)定傳導(dǎo)塑料電阻率的測(cè)試方法 - It's difficult to find pointed probe in a sentence. 用pointed probe造句挺難的
- Gold pointed probe
金尖探子 - Testing method of resistivity for silicon crystals and silicon wafers with four - point probe
用四點(diǎn)探針法對(duì)硅晶體和硅片電阻率的測(cè)試方法 - Test method for resistivity of conductive fine ceramic thin films with a four - point probe array
用四點(diǎn)探針排列法測(cè)定傳導(dǎo)精細(xì)陶瓷薄膜電阻率的試驗(yàn)方法 - Standard practice for measuring sheet resistance of thin film conductors for flat panel display manufacturing using a four - point probe
使用四點(diǎn)探測(cè)法測(cè)定專業(yè)平板顯示器用薄膜導(dǎo)線的薄膜電阻的標(biāo)準(zhǔn)規(guī)程 - This is the first time in this field . 2 . putting forward rymaszewski method to square four point probe measurement
利用rymaszewski法自動(dòng)消除探針縱向游移影響的優(yōu)點(diǎn)，將它應(yīng)用于方形探針測(cè)試法中3 - Accomplishing the development of square four point probe instrument with the function of image manipulation for testing sheet resistance automatically
4完成具有圖像識(shí)別功能的全自動(dòng)四探針微區(qū)電阻率測(cè)試儀的研制。 - The surface resistance and electromagnetic interference ( emi ) shielding effectiveness of the conductive fabrics were measured by four point probe method ( astmf 390 ) and the coaxial transmission line method ( astm d4935 - 99 ) , respectively
分別用四探針法和雙軸傳輸線法測(cè)量了導(dǎo)電滌綸織物的表面電阻和電磁屏蔽效能。 - Based upon the fact that under the policy of high school management system reformation , part of high schools in our country have been merged since 1990 . this article which takes the analysis of campus culture conflict as a cut - in point probes deeply into the campus cultural conformity after high school being merged
本文立足于90年代以來在高教管理體制改革的有關(guān)方針指引下我國(guó)部分高校進(jìn)行重組合并的現(xiàn)實(shí)，以分析高校合并后出現(xiàn)的校園文化的沖突為切入點(diǎn)，就高校合并后校園文化整合的問題進(jìn)行了較為深入的探討。 - The experimental instruments , apparatus and the means to prepare all the samples are introduced in the first section . in section 2 , the experimental system including the oxidization system and diffusion system , are introduced therein . in section 3 , the samples preparation including the pre - deposition , redistribution and re - oxidization , the samples of b doping , and the fabrication of ga - diffusion transistor , b - diffusion and the transistor formed by b diffusion following ga diffusion are detailed therein , and the as - prepared samples are analyzed by sims , srp and four point probe
首先介紹了制備各種樣品所用的實(shí)驗(yàn)儀器、設(shè)備與方法；第二節(jié)中介紹了實(shí)驗(yàn)系統(tǒng)，包括氧化系統(tǒng)、擴(kuò)散系統(tǒng)，第三節(jié)介紹了樣品的制備，包括ga的預(yù)沉積、再分布、二次氧化樣品，擴(kuò)硼樣品，以及擴(kuò)嫁晶體管、擴(kuò)硼晶體管和擴(kuò)鐮后再補(bǔ)充擴(kuò)硼晶體管的制備流程；實(shí)驗(yàn)所得樣品，借助二次離子質(zhì)譜（ sims ） 、擴(kuò)展電阻（ srp ） 、四探針薄層電阻等先進(jìn)的測(cè)試分析方法進(jìn)行分析。 - Many important properties of semiconductor devices are relevant with their resistivity , which brings forward strict demands to the uniformity of the resistivity . especially micro - area ' s characteristics attract extensive attention . under this background , four - point probe measurement technique requires a new development
許多器件的重要參數(shù)與電阻率有關(guān)，因此這對(duì)晶體電阻率的均勻性，電學(xué)特性提出了更為嚴(yán)格的要求，特別是微區(qū)的電特性和均勻性引起了人們的廣泛關(guān)注。
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